生命周期: | Contact Manufacturer | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.62 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 35 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 180 |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-W3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC1330 | MICRO-ELECTRONICS | Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
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2SC1335 | ETC | LOW FREQUENCY LOW NOISE AMPLIFIER |
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2SC1342 | HITACHI | Silicon NPN Epitaxial Planar |
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2SC1342A | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 30MA I(C) | TO-92 |
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2SC1342ARF | HITACHI | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic |
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2SC1342ARF | RENESAS | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic |
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