Datasheet > 2SC1318AS

2SC1318AS

更新时间： 2024-02-24 04:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	71K
描述
TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 500MA I(C) \| TO-226AA

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2SC1318AS 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.67	Base Number Matches：	1

2SC1318AS 数据手册

Transistor

2SC1318A

Silicon NPN epitaxial planer type

For low-frequency driver amplification

Unit: mm

4.0 0.2

Complementary to 2SA0720A (2SA720A)

5.0 0.2

Features

High collector to emitter voltage V_CEO

Optimum for the driver stage of a low-frequency and 25 to 30W

output amplifier.

Absolute Maximum Ratings (Ta=25˚C)

0.45–⁺0⁰.^.1²

0.45⁺^–0⁰^.^.¹²

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1.27

1 2 3

1:Emitter

2:Collector

3:Base

0.5

I_C

2.54 0.15

JEDEC:TO–92

EIAJ:SC–43A

Collector power dissipation

Junction temperature

Storage temperature

P_C

750

˚C

T_j

150

T_stg

–55 ~ +150

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

V_CB= 20V, I_E= 0

0.1

V_CBO

V_CEO

V_EBO

I_C= 10µA, I_E= 0

I_C= 2mA, I_B= 0

I_E= 10µA, I_C= 0

V_CE= 10V, I_C= 150mA^*2

V_CE= 10V, I_C= 500mA^*2

I_C= 300mA, I_B= 30mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

160

100

0.2

340

h_FE1

h_FE2

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.6

1.5

0.85

120

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

Note.) The Part number in the Parenthesis shows conventional part number.

12 3 4

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