5秒后页面跳转
2SC1214TZ PDF预览

2SC1214TZ

更新时间: 2023-02-26 15:32:12
品牌 Logo 应用领域
日立 - HITACHI 放大器晶体管
页数 文件大小 规格书
1页 100K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

2SC1214TZ 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-PBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.61最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

2SC1214TZ 数据手册

  

与2SC1214TZ相关器件

型号 品牌 获取价格 描述 数据表
2SC1215 PANASONIC

获取价格

Silicon NPN epitaxial planer type
2SC1215S PANASONIC

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
2SC1215T PANASONIC

获取价格

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silic
2SC1222 MICRO-ELECTRONICS

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1222 NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1222E NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1222F NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1222U NEC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
2SC1226 PANASONIC

获取价格

Silicon NPN Epitaxial Planar Type
2SC1226 NJSEMI

获取价格

Si NPN Power HF BJT