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2SC1215S PDF预览

2SC1215S

更新时间: 2024-01-25 08:10:09
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 65K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92, SC-43A, 3 PIN

2SC1215S 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.76
最大集电极电流 (IC):0.05 A基于收集器的最大容量:1.5 pF
集电极-发射极最大电压:20 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1200 MHz
Base Number Matches:1

2SC1215S 数据手册

 浏览型号2SC1215S的Datasheet PDF文件第2页浏览型号2SC1215S的Datasheet PDF文件第3页 
Transistor  
2SC1215  
Silicon NPN epitaxial planer type  
For high-frequency (VHF band) amplification and oscillation  
Unit: mm  
4.0±0.2  
5.0±0.2  
Features  
High transition frequency fT.  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
0.45+00..12  
0.45+00..12  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
30  
1.27  
1.27  
20  
V
3
50  
V
mA  
mW  
˚C  
1 2 3  
1:Emitter  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
2.54±0.15  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
Conditions  
min  
typ  
max  
Unit  
V
Collector to base voltage  
Emitter to base voltage  
Forward current transfer ratio  
Base to emitter voltage  
IC =100µA, IE = 0  
30  
3
VEBO  
hFE  
IE = 10µA, IC = 0  
V
VCB = 10V, IE = –2mA  
VCB = 10V, IE = –2mA  
25  
VBE  
0.72  
0.1  
1
V
V
Collector to emitter saturation voltage VCE(sat)  
IC = 10mA, IB = 1mA  
Common emitter reverse transfer capacitance Cre  
*
VCE = 10V, IC = 1mA, f = 10.7MHz  
VCB = 10V, IE = –15mA, f = 100MHz  
VCB = 10V, IE = –1mA, f = 100MHz  
VCB = 10V, IE = –10mA, f = 450kHz  
1.5  
pF  
Transition frequency  
Power gain  
fT  
600  
1200  
20  
1600  
MHz  
dB  
ps  
PG  
Base time constant  
rbb' · CC  
25  
*fT Rank classification  
Rank  
T
S
fT(MHz)  
600 ~ 1300 900 ~ 1600  
1

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