Datasheet > 2SC1227

2SC1227

更新时间： 2024-01-22 00:12:22

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	130K
描述
Silicon NPN Power Transistors

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2SC1227 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC1227

DESCRIPTION

·With TO-3 package

·High power dissipation

APPLICATIONS

·Suitable for use in clocked

voltatge converters

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

MAXIMUN RATINGS

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

VALUE

300

200

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open emitter

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

100

150

-55~150

℃

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.25

℃/W

12 3

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2SC1279S	NEC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC1279SP	NEC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC1279SQ	NEC	获取价格	Small Signal Bipolar Transistor, 0.05A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92