Datasheet > 2SC1061_15

2SC1061_15

更新时间： 2024-09-23 01:20:59

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	212K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SC1061_15 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

2SC1061

DESCRIPTION

·With TO-220 package

·Low saturation voltage

·Complement to type 2SA671

·Note: type 2SC1060 with short pin

APPLICATIONS

·For use in low frequency power

amplifier applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-peak

Base current (DC)

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_CM

I_B

0.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-a}

Thermal resistance from junction to case

5.0

℃/W

12 3 4

中文翻译

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与2SC1061_15相关器件

型号	品牌	获取价格	描述	数据表
2SC1061_2014	JMNIC	获取价格	Silicon NPN Power Transistors
2SC1061A	MOSPEC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-220AB
2SC1061B	MOSPEC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-220AB
2SC1061C	MOSPEC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-220AB
2SC1061D	MOSPEC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 3A I(C) \| TO-220AB
2SC1070	NEC	获取价格	NPN SILICON TRANSISTOR
2SC1070(1)	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC1070(1)Q	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC1070(2)	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili
2SC1070(2)F	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Sili