Datasheet > 2SB885_2014

2SB885_2014

更新时间： 2022-02-26 12:51:36

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	156K
描述
Silicon PNP Power Transistor

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2SB885_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistor

2SB885

DESCRIPTION

·With TO-220C package

·DARLINGTON

·High DC durrent gain

·Low collector saturation voltage

·Complement to type 2SD1195

APPLICATIONS

·For motor drivers,printer hammer

drivers,relay drivers,voltage regulator

control applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-DC

Collector current-Pulse

CONDITIONS

VALUE

-110

-100

-6

UNIT

Open emitter

Open base

Open collector

-5

I_CM

-8

T_C=25℃

T_a=25℃

P_C

Collector power dissipation

1.75

150

T_j

Junction temperature

Storage temperature

℃

T_stg

-55~150

12 3

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