RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
2SB709A
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.2
W(Tamb=25OC)
SOT-23
COLLECTOR
3
MECHANICAL DATA
* Case: Molded plastic
0.055(1.40)
0.047(1.20)
BASE
1
2
EMITTER
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
* Weight: 0.008 gram
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
3
For capacitive load ,derate current by 20%.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
VALUE
-45
UNITS
V
V
V
CBO
Collector-base voltage
V
CEO
-45
Collector-emitter voltage
Emitter-base voltage
V
V
EBO
-7
mA
IC
-200
Collector current-continuous
OC
-55-150
Junction and Storage temperature
TJ,Tstg
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
UNITS
MAX
-
CHARACTERISTICS
Collector-base breakdown voltage (I = -10µA, I =0)
SYMBOL
MIN
-45
V
(BR)CBO
(BR)CEO
C
E
V
V
V
-
-
Collector-emitter breakdown voltage (I = -2mA, I =0)
-45
-7
C
B
Emitter-base breakdown voltage (I = -10µA, I =0)
V
V
E
C
(BR)EBO
µA
Collector cut-off current (V = -20V, I =0)
I
-
-
CB
E
CBO
-0.1
Emitter cut-off current (V = -10V, I =0)
-100
µA
CE
B
I
CEO
-
DC current gain (V = -10V, I = -2mA)
460
h
160
-
CE
C
FE
Collector-emitter saturation voltage (I = -100mA, I = -10mA)
V
C
B
-0.5
-
V
CE(sat)
Transition frequency (V = -10V, I = -1mA, f= 200MHZ)
CE
f
C
MHz
PF
T
60
-
Collector output capacitance (V = -10V, I = 0, f= 1MHz)
Cob
2.7
CB
E
CLASSIFICATION OF h
FE
RANK
Q
R
S
Range
160-260
BQ1
210-340
BR1
290-460
BS1
Marking
2006-3