SMD Type
Transistors
PNP Transistors
2SB709A-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
■ Features
3
● For general amplification
● Complimentary to 2SD601A-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
2
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
-45
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
-45
-7
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-100
200
150
mA
P
C
mW
T
J
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA, I =0
Ic= -2 mA, I =0
= -100μA, I
Min
-45
-45
-7
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-Emitter cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
=0
ICBO
ICEO
I
EBO
V
V
V
CB= -40 V , I
CE= -20 V , I
EB= -6V , I
E
=0
=0
-0.1
-100
-0.1
-0.5
-1.2
460
2.7
uA
V
B
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=-100 mA, I
B
=-10mA
=-10mA
V
C=-100 mA, I
B
hFE
V
V
V
CE= -10V, I
CB= -10V, I
CE= -10V, I
C
= -2mA
160
60
Collector output capacitance
Transition frequency
C
ob
T
E
C
= 0,f=1MHz
pF
f
= -1mA,f=200MHz
MHz
■ Classification of hfe
Type
Range
Marking
2SB709A-Q-HF 2SB709A- R-HF 2SB709A-S-HF
160-260 210-340 290-460
BQ1 BR1 BS1
F
F
F
1
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