Datasheet > 2SB709A_0712

2SB709A_0712

更新时间： 2022-09-17 00:55:08

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
4页	186K
描述
Silicon Epitaxial Planar Transistor

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2SB709A_0712 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SB709A

FEATURES

Lead-free

High forward current transfer ratio h_FE.

Mini type package, allowing downsizing

of the equipment and automatic insertion

through the tape packing and the magazine

packing.

APPLICATIONS

SOT-23

For general amplification complementary to 2SD601A

ORDERING INFORMATION

Type No.

2SB709A

Marking

Package Code

SOT-23

BQ1,BR1,BS1

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-45

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_CP

-45

-7

Peak collector Current

Collector Current

-200

-100

200

℃

I_C

Collector Dissipation

P_C

Junction and Storage Temperature

T_j,T_stg

-55~150

Document number: BL/SSSTC015

Rev.A

www.galaxycn.com

12 3 4

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