Datasheet > 2SB709A_11

2SB709A_11

更新时间： 2022-09-17 00:55:02

品牌	Logo	应用领域
SECOS		晶体晶体管
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3页	621K
描述
PNP Silicon General Purpose Transistor

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2SB709A_11 数据手册

2SB709A

-0.2A , -45V

PNP Silicon General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

SOT-23

ꢀ

For general amplification

Complementary of the 2SD601A

ꢀ

Top View

C B

CLASSIFICATION OF h_FE

2SB709A-Q

160~260

BQ1

2SB709A-R

2SB709A-S

290~460

BS1

Product-Rank

Range

210~340

BR1

Marking

Millimeter

Min. Max.

REF.

Min.

Max.

3.04

2.55

1.40

1.15

2.04

0.50

PACKAGE INFORMATION

2.80

2.10

1.20

0.89

1.78

0.30

0.09

0.45

0.08

0.18

0.60

0.177

Package

MPQ

LeaderSize

7’ inch

0.6 REF.

SOT-23

0.89

1.02

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V_CBO

Ratings

-45

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Currrent

V_CEO

-45

V_EBO

-7

I_C

-100

200

Collector Power Dissipation

Junction & Storage Temperature

P_C

T_J, T_STG

150, -55 ~ 150

℃

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Typ.

Max.

Unit

Test Conditions

-45

-7

I_C= -10μA, I_E=0

I_C= -2mA, I_B=0

I_E= -10μA, I_C=0

-0.1

-100

-0.5

460

μA

V_CB= -20V, I_E=0

Emitter cut-off current

I_CEO

V_CE= -10V, I_B=0

Collector-emitter saturation voltage

DC current gain

V_CE(sat)

h_FE

I_C= -100mA, I_B= -10mA

V_CE= -10V, I_C= -2mA

V_CE= -10V, I_C= -1mA, f=200MHz

V_CB= -10V, I_E=0, f=1MHz

160

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

2.7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

21-Jan-2011 Rev. B

Page 1 of 3

12 3

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