Datasheet > 2SB710A

2SB710A

更新时间： 2024-09-23 07:30:15

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管光电二极管放大器
页数	文件大小	规格书
1页	37K
描述
Silicon PNP Epitaxial Planar Type

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中文翻译

获取价格

数据手册

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2SB710A 数据手册

SMD Type

TransistIoCrs

Silicon PNP Epitaxial Planar Type

2SB710A

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

Features

+0.1

-0.1

Large collector current IC.

Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing and the magazine packing.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-60

-50

Collector-emitter voltage

Emitter-base voltage

Collector current

-5

-0.5

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

I^CP

-1

P^C

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^CBO

Testconditons

Min

-60

-50

-5

Typ

Max

Unit

Collector-base voltage

IC = -10 ìA, IE = 0

Collector-emitter voltage

Emitter-base voltage

IC = -10 mA, IB = 0

IE = -10 ìA, IC = 0

Collector-base cutoff current

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

VCB = -20 V, IE = 0

VCE = -10 V, IC = -150 mA

-0.1

340

µA

h^FE

V^CE(sat)IC = -300 mA, IB = -30 mA

V^BE(sat)IC = -300 mA, IB = -30 mA

-0.35 -0.6

-1.1

200

-1.5

f^T

VCB = -10 V, IE = 50 mA , f = 200 MHz

VCB = -10V , IE = 0 , f = 1.0MHz

MHz

Collector output capacitance

C^ob

hFE Classification

Marking

h^FE

170 340

85 170

120 240

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2SB710A-R	KEXIN	获取价格	PNP Transistors
2SB710A-R-HF	KEXIN	获取价格	PNP Transistors
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