Datasheet > 2SB595_15

2SB595_15

更新时间： 2024-01-25 03:59:13

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	222K
描述
Silicon PNP Power Transistors

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中文翻译

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2SB595_15 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB595

DESCRIPTION

·With TO-220C package

·Complement to type 2SD525

·High breakdown voltage :V_CEO=-100V

·Low collector saturation volage

: V_CE(sat)=-2.0V(Max)

APPLICATIONS

·Power amplifier applications

·Recommend for 30W high fidelity

audio frequency amplifier output stage

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-100

-5

UNIT

Open base

Open collector

-5

I_E

Emitter current

-5

I_B

Base current

-4

P_C

Collectorl power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-55~150

T_stg

12 3 4

中文翻译

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与2SB595_15相关器件

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