生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 40 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB595Y | TOSHIBA |
获取价格 |
TRANSISTOR 5 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB, BIP General Purpose Power |
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2SB596 | MOSPEC |
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POWER TRANSISTORS(4.0A,80V,30W) |
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2SB596 | Wing Shing |
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PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
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2SB596 | JMNIC |
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Silicon PNP Power Transistors |
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2SB596 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors |
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2SB596 | ISC |
获取价格 |
Silicon PNP Power Transistors |
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2SB596 | SWST |
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功率三极管 |
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2SB596_15 | JMNIC |
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Silicon PNP Power Transistors |
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2SB596_2014 | JMNIC |
获取价格 |
Silicon PNP Power Transistors |
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2SB596O | MOSPEC |
获取价格 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
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