Datasheet > 2SB1589

2SB1589

更新时间： 2024-11-20 22:52:39

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	39K
描述
Silicon PNP epitaxial planer type(For low-frequency output amplification)

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中文翻译

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数据手册

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2SB1589 数据手册

Transistor

2SB1589

Silicon PNP epitaxial planer type

For low-frequency output amplification

Unit: mm

1.5±0.1

4.5±0.1

1.6±0.2

Features

■

●

Low collector to emitter saturation voltage V_CE(sat)

●

Large collector power dissipation P_C.

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

45°

0.4±0.08

0.4±0.04

0.5±0.08

1.5±0.1

3.0±0.15

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

marking

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–10

–7

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

–2

–1.5

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

Marking symbol : 1U

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

_CB= –7V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

–1

V_CBO

V_CEO

V_EBO

h_FE

I_C= –10µA, I_E= 0

–10

–7

I_C= –1mA, I_B= 0

I_E= –10µA, I_C= 0

Forward current transfer ratio

V_CE= –1V, I_C= –400mA^*2

I_C= –1A, I_B= –25mA^*2

V_CB= –6V, I_E= 50mA, f = 200MHz

V_CB= –10V, I_E= 0, f = 1MHz

I_F= –500mA

200

700

Collector to emitter saturation voltage V_CE(sat)

– 0.24

190

– 0.35

MHz

Transition frequency

f_T

Collector output capacitance

Forward voltage

C_ob

V_F

–1.3

^*1Applicable to the built-in diode.

^*2Pulse measurement

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