Datasheet > 2SB1412-R

2SB1412-R

更新时间： 2024-11-23 01:11:55

品牌	Logo	应用领域
美微科 - MCC		晶体管
页数	文件大小	规格书
4页	653K
描述
PNP Silicon Epitaxial Transistors

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中文翻译

获取价格

数据手册

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2SB1412-R 数据手册

2SB1412-P

2SB1412-Q

2SB1412-R

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

xꢀ Low Collector Saturation Voltage

PNP Silicon

Epitaxial Transistors

xꢀ Execllent current-to-gain characteristics

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Marking: B1412

Halogen free available upon request by adding suffix "-HF"

DPAK

Maximum Ratings

Symbol

Rating

Unit

V_CEO

Collector-Emitter Voltage

-30

V_CBO

V_EBO

I_C

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

-20

-6.0

-5.0

P_C

Collector power dissipation

1.0

T_J

Junction Temperature

Storage Temperature

150

T_STG

-55 to +150

Electrical Characteristics @ 25к Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

V_(BR)CBO

Collector-base Breakdown Voltage

(I_C=-50µAdc, I_E=0)

Collector-Emitter Breakdown Voltage

-30

---

Vdc

V_(BR)CEO

V_(BR)EBO

I_CBO

-20

-6

---

Vdc

(I_C=-1mAdc, I_B=0)

Emitter-base Breakdown Voltage

(I_E=-50µAdc, I_C=0)

Collector-Base Cutoff Current

---

-0.5

µAdc

(V_CB=-20Vdc,I_E=0)

I_EBO

Emitter-Base Cutoff Current

(V_EB=-5Vdc, I_C=0)

DC Current Gain

(I_C=-0.5Adc, V_CE=-2.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=-4Adc, I_B=-100mAdc)

---

PIN 1. BASE

PIN 2.4 COLLECTOR

PIN 3. EMITTER

h_FE(1)

V_CE(sat)

f_T

---

390

-1.0

---

Vdc

MHz

---

DIMENSIONS

Transition Frequency

120

INCHES

MAX

DIM

MIN

MAX

2.40

0.13

0.86

0.58

6.70

5.46

NOTE

(V_CE=-6Vdc, I_C=-500mAdc,f=30MHz)

Collector output capacitance

(V_CB=-20Vdc, I_E=0,f=1.0MHz)

0.087

0.000

0.026

0.018

0.256

0.201

0.094

0.005

0.034

0.023

0.264

0.215

2.20

0.00

0.66

0.46

6.50

5.10

C_ob

---

ꢀ

0.190

0.114

4.83

2.90

0.236

0.086

0.386

0.244

0.094

0.409

6.00

2.18

9.80

6.20

2.39

10.40

CLASSIFICATION OF H^{FE (1)}

0.055

0.067

1.40

1.70

Rank

0.063

1.60

1.10

0.00

5.35

0.043

0.051

1.30

Range

82-180

120-270

180-390

0.000

0.012

0.30

0.211

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Revision:

2013/03/08

12 3 4

中文翻译

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与2SB1412-R相关器件

型号	品牌	获取价格	描述	数据表
2SB1412RL-TN3-F-R	UTC	获取价格	Transistor
2SB1412RTL	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, CPT3, SC-
2SB1412R-TN3-F-R	UTC	获取价格	Transistor
2SB1412-R-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
2SB1412TL/P	ROHM	获取价格	5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN
2SB1412TL/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412TL/PR	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412TL/Q	ROHM	获取价格	5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN
2SB1412TL/QR	ROHM	获取价格	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon,
2SB1412TL/R	ROHM	获取价格	5000mA, 20V, PNP, Si, SMALL SIGNAL TRANSISTOR, CPT3, SC-63, 3 PIN

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