生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.77 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 32 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 82 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1329T105Q | ROHM |
获取价格 |
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1329T105R | ROHM |
获取价格 |
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1330 | ROHM |
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TRANSISTORS TO 92L TO-92LS MRT | |
2SB1330P | ROHM |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-92 | |
2SB1330Q | ROHM |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-92 | |
2SB1330R | ROHM |
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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-92 | |
2SB1330T105 | ROHM |
获取价格 |
Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1330T105/P | ROHM |
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0.7A, 80V, PNP, Si, POWER TRANSISTOR | |
2SB1330T105/PQ | ROHM |
获取价格 |
Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1330T105/PR | ROHM |
获取价格 |
Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, |