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2SB1329T105P PDF预览

2SB1329T105P

更新时间: 2024-11-20 14:39:23
品牌 Logo 应用领域
罗姆 - ROHM 开关晶体管
页数 文件大小 规格书
4页 114K
描述
Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

2SB1329T105P 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.77
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:32 V配置:SINGLE
最小直流电流增益 (hFE):82JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

2SB1329T105P 数据手册

 浏览型号2SB1329T105P的Datasheet PDF文件第2页浏览型号2SB1329T105P的Datasheet PDF文件第3页浏览型号2SB1329T105P的Datasheet PDF文件第4页 

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型号 品牌 获取价格 描述 数据表
2SB1329T105Q ROHM

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Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SB1329T105R ROHM

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Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
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2SB1330P ROHM

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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-92
2SB1330Q ROHM

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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-92
2SB1330R ROHM

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TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-92
2SB1330T105 ROHM

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Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1330T105/P ROHM

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0.7A, 80V, PNP, Si, POWER TRANSISTOR
2SB1330T105/PQ ROHM

获取价格

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1330T105/PR ROHM

获取价格

Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,