生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.77 |
最大集电极电流 (IC): | 0.7 A | 基于收集器的最大容量: | 20 pF |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 180 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
VCEsat-Max: | 0.4 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1330T105Q | ROHM |
获取价格 |
Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1330T105R | ROHM |
获取价格 |
Power Bipolar Transistor, 0.7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
2SB1331 | ROHM |
获取价格 |
TRANSISTORS TO 92L TO-92LS MRT | |
2SB1331P | ROHM |
获取价格 |
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | SIP | |
2SB1331Q | ROHM |
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TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | SIP | |
2SB1331R | ROHM |
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TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | SIP | |
2SB1331T105 | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1331T105/P | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1331T105/PQ | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 | |
2SB1331T105/PR | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |