Datasheet > 2SB1202R(TO-252)

2SB1202R(TO-252)

更新时间： 2024-11-23 15:31:59

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	131K
描述
Transistor

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中文翻译

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技术参数
数据手册

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2SB1202R(TO-252) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	3 A	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	15 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

2SB1202R(TO-252) 数据手册

UTC2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR

HIGH CURRENT SWITCHING

APPLICATION

DESCRIPTION

The UTC 2SB1202 applies to voltage regulators, relay

drivers, lamp drivers, and electrical equipment.

FEATURES

*Adoption of FBET, MBIT processes

*Large current capacity and wide ASO

*Low collector-to-emitter saturation voltage

*Fast switching speed

TO-252

1: BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified )}

PARAMETER

Collector-Base Voltage

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

-60

-50

-6

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Power Dissipation

Tc=25°C

°C

Collector Current(DC)

Collector Current(PULSE)

Junction Temperature

Storage Temperature

Icp

-3

-6

150

TSTG

-55 ~ +150

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain (note)

SYMBOL

ICBO

TEST CONDITIONS

V_CB=-40V,I_E=0

MIN TYP MAX UNIT

-1

560

µA

IEBO

h_FE1

h_FE2

Cob

VCE(sat)

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

V_EB=-4V,I_C=0

V_CE=-2V, Ic=-100mA

V_CE=-2V, Ic=-3A

V_CE=-10V, I_C=-50mA

V_CB=-10V, f=1MHz

I_C=-2A, I_B=-100mA

I_C=-10µA, I_E=0

I_C=-1mA, R_BE=∞

I_E=-10µA, I_C=0

See test circuit

100

Gain-Bandwidth Product

Output Capacitance

150

-0.35 -0.7

-0.94 -1.2

MHz

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

Turn-on Time

-60

-50

-6

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R209-005,A

12 3 4

中文翻译

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