生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.33 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 280 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 15 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 150 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1202S(TP-FA) | ONSEMI |
获取价格 |
暂无描述 | |
2SB1202S-E | ONSEMI |
获取价格 |
Bipolar Transistor | |
2SB1202-S-T6C-K | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SB1202-S-T6C-R | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SB1202-S-T6C-T | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SB1202S-TL-E | ONSEMI |
获取价格 |
Bipolar Transistor | |
2SB1202-S-TM3-K | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SB1202-S-TM3-R | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SB1202-S-TM3-T | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION | |
2SB1202-S-TN3-K | UTC |
获取价格 |
HIGH CURRENT SWITCHING APPLICATION |