Datasheet > 2SB1202T(TO-126C)

2SB1202T(TO-126C)

更新时间： 2024-11-23 14:31:39

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	148K
描述
Transistor

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技术参数
数据手册

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2SB1202T(TO-126C) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
最大集电极电流 (IC)：	3 A	配置：	Single
最小直流电流增益 (hFE)：	200	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	15 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

2SB1202T(TO-126C) 数据手册

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UTC2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR

HIGH CURRENT SWITCHING

APPLICATION

DESCRIPTION

The UTC 2SB1202 applies to voltage regulators, relay

drivers, lamp drivers, and electrical equipment.

FEATURES

*Adoption of FBET, MBIT processes

TO-126C

*Large current capacity and wide ASO

*Low collector-to-emitter saturation voltage

*Fast switching speed

1: EMITTER 2: COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS ^{(Ta=25°C, unless otherwise specified )}

PARAMETER

SYMBOL

VCBO

VALUE

UNIT

Collector-Base Voltage

-60

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

VEBO

-50

-6

-3

-6

Collector Power Dissipation

Tc=25°C

Collector Current(DC)

Collector Current(PULSE)

Junction Temperature

Storage Temperature

Icp

°C

150

-55 ~ +150

°C

TSTG

ELECTRICAL CHARACTERISTICS ^{(Ta=25°C, unless otherwise specified)}

PARAMETER

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain (note)

SYMBOL

ICBO

TEST CONDITIONS

V_CB=-40V,I_E=0

MIN TYP MAX UNIT

-1

µA

IEBO

V_EB=-4V,I_C=0

V_CE=-2V, Ic=-100mA

h_FE1

h_FE2

100

560

V_CE=-2V, Ic=-3A

Gain-Bandwidth Product

Output Capacitance

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

Turn-on Time

Cob

V_CE=-10V, I_C=-50mA

V_CB=-10V, f=1MHz

I_C=-2A, I_B=-100mA

150

-0.35 -0.7

-0.94 -1.2

MHz

VCE(sat)

VBE(sat)

V(BR)CBO I_C=-10µA, I_E=0

V(BR)CEO I_C=-1mA, R_BE=∞

V(BR)EBO I_E=-10µA, I_C=0

ton

tstg

-60

-50

-6

See test circuit

450

Storage Time

Fall Time

UTC UNISONIC TECHNOLOGIES CO. LTD

QW-R217-005,A

12 3 4

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