JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251/TO-252-2Plastic-Encapsulate Transistors
TO-251
TO-252-2
2SB1202 TRANSISTOR (PNP)
FEATURES
z
z
z
z
Adoption of FBET,MBIT processes
1.BASE
Large current capacity and wide ASO
Low collector-to-emitter saturation voltage
Fast switching speed
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-50
V
-6
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
-3
A
PC
1
W
℃
℃
TJ
150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-60
-50
-6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic=-100µA, IE=0
Ic=-1mA, IB=0
V
V
IE=-100µA, IC=0
µA
µA
VCB=-40V, IE=0
-1
-1
Emitter cut-off current
IEBO
VEB=-4V, IC=0
hFE(1)
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
100
35
560
DC current gain
hFE(2)
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
V
IC=-2A, IB=-100mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
-0.7
MHz
pF
fT
150
39
Collector output capacitance
Cob
CLASSIFICATION OF hFE(1)
R
S
T
U
Rank
100-200
140-280
200-400
280-560
Range