Datasheet > 2SB1202R(TO-252-2)

2SB1202R(TO-252-2)

更新时间： 2024-11-10 07:55:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	162K
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Transistor

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2SB1202R(TO-252-2) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SB1202R(TO-252-2) 数据手册

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-251/TO-252-2Plastic-Encapsulate Transistors

TO-251

TO-252-2

2SB1202 TRANSISTOR (PNP)

FEATURES

Adoption of FBET,MBIT processes

1.BASE

Large current capacity and wide ASO

Low collector-to-emitter saturation voltage

Fast switching speed

2.COLLECTOR

3.EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-50

-6

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

-3

P_C

℃

T_J

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

-60

-50

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=-100µA, I_E=0

Ic=-1mA, I_B=0

I_E=-100µA, I_C=0

µA

V_CB=-40V, I_E=0

-1

Emitter cut-off current

I_EBO

V_EB=-4V, I_C=0

h_FE(1)

V_CE=-2V, I_C=-100mA

V_CE=-2V, I_C=-3A

100

560

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

I_C=-2A, I_B=-100mA

V_CE=-10V, I_C=-50mA

V_CB=-10V, I_E=0, f=1MHz

-0.7

MHz

f_T

150

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

100-200

140-280

200-400

280-560

Range

12 3

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