Datasheet > 2SB1149_2014

2SB1149_2014

更新时间： 2024-01-18 19:20:28

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
3页	160K
描述
Silicon PNP Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SB1149_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1149

DESCRIPTION

·With TO-126 package

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

APPLICATIONS

·For use in operating from IC without

predriver ,such as hammer driver

PINNING(See Fig.2)

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-peak

CONDITIONS

VALUE

-100

-8

UNIT

Open emitter

Open base

Open collector

-3.0

I_CM

-5.0

T_a=25℃

T_C=25℃

1.3

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

℃

T_stg

-55~150

12 3

中文翻译

下载PDF

与2SB1149_2014相关器件

型号	品牌	获取价格	描述	数据表
2SB1149-AZ	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1149K	ISC	获取价格	Transistor
2SB1149-K	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1149-K-AZ	RENESAS	获取价格	3A, 100V, PNP, Si, POWER TRANSISTOR
2SB1149L	ISC	获取价格	Transistor
2SB1149-L	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1149-L-AZ	RENESAS	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1149M	ISC	获取价格	暂无描述
2SB1149-M	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
2SB1149-M-AZ	NEC	获取价格	Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,