是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.22 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 70 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 2000 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1150-M-AZ | RENESAS |
获取价格 |
3A, 70V, PNP, Si, POWER TRANSISTOR |
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2SB1151 | NEC |
获取价格 |
Low Collector Saturation Voltage |
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2SB1151 | TGS |
获取价格 |
It is intented for use in power amplifier and switching applications. |
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2SB1151 | JMNIC |
获取价格 |
Silicon PNP Power Transistors |
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2SB1151 | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
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2SB1151 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors |
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2SB1151 | ISC |
获取价格 |
Silicon PNP Power Transistors |
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2SB1151 | SECOS |
获取价格 |
PNP Plastic Encapsulated Transistor |
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2SB1151 | NJSEMI |
获取价格 |
Trans GP BJT PNP 60V 5A 3-Pin TO-126 |
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2SB1151_10 | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
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