是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SIP | 包装说明: | HALOGEN FREE PACKAGE-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.61 | Is Samacsys: | N |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1151G-Y-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ |
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2SB1151K | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-126 |
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2SB1151-K | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1151L | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-126 |
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2SB1151-L | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1151-L-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1151L-O-AA3-T | UTC |
获取价格 |
Power Bipolar Transistor |
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2SB1151L-O-T60-K | UTC |
获取价格 |
Power Bipolar Transistor |
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2SB1151L-O-T60-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
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2SB1151L-O-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ |
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