是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.61 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1151L-T60-T | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
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2SB1151L-X-AA3-R | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
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2SB1151L-X-T60-K | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
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2SB1151L-X-TN3-R | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT |
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2SB1151L-Y-AA3-T | UTC |
获取价格 |
Power Bipolar Transistor |
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2SB1151L-Y-T60-K | UTC |
获取价格 |
Power Bipolar Transistor |
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2SB1151L-Y-T60-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
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2SB1151L-Y-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ |
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2SB1151M | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-126 |
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2SB1151-M | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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