Datasheet > 2SB1151_2014

2SB1151_2014

更新时间： 2024-10-03 01:20:03

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	224K
描述
Silicon PNP Power Transistors

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中文翻译

获取价格

数据手册

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2SB1151_2014 数据手册

JMnic

Product Specification

Silicon PNP Power Transistors

2SB1151

DESCRIPTION

·With TO-126 package

·Complement to type 2SD1691

·Low saturation voltage

·Large current

·High total power dissipation:P_T=1.3W

·Large current capability and wide SOA

APPLICATIONS

·DC-DC converter

·Driver of solenoid or motor

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

CONDITIONS

Open emitter

VALUE

-60

UNIT

Open base

-60

Open collector

-7

-5

I_CM

-8

I_B

-1

T_a=25℃

T_C=25℃

1.3

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4

中文翻译

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