生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.82 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SB1151G-Y-T60-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
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2SB1151G-Y-TN3-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/ |
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2SB1151K | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-126 |
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2SB1151-K | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1151L | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-126 |
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2SB1151-L | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1151-L-AZ | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 |
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2SB1151L-O-AA3-T | UTC |
获取价格 |
Power Bipolar Transistor |
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2SB1151L-O-T60-K | UTC |
获取价格 |
Power Bipolar Transistor |
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2SB1151L-O-T60-R | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ |
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