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2SB1036R PDF预览

2SB1036R

更新时间: 2024-02-23 12:50:24
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器
页数 文件大小 规格书
2页 40K
描述
Small Signal Bipolar Transistor, 0.02A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, NS-B1, 3 PIN

2SB1036R 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:LOW NOISE
最大集电极电流 (IC):0.02 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):260
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz

2SB1036R 数据手册

 浏览型号2SB1036R的Datasheet PDF文件第2页 
Transistor  
2SB1036  
Silicon PNP epitaxial planer type  
For low-frequency and low-noise amplification  
Unit: mm  
4.0±0.2  
Features  
Optimum for high-density mounting.  
Allowing supply with the radial taping.  
Low noise voltage NV.  
marking  
Absolute Maximum Ratings (Ta=25˚C)  
1
2
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–120  
–120  
–5  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
1.27 1.27  
V
2.54±0.15  
V
–50  
mA  
mA  
mW  
˚C  
1:Emitter  
2:Collector  
3:Base  
EIAJ:SC–72  
New S Type Package  
IC  
–20  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
300  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
–100  
–1  
Unit  
nA  
µA  
V
VCB = –50V, IE = 0  
VCE = –50V, IB = 0  
C = –10µA, IE = 0  
Collector cutoff current  
ICEO  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
hFE*  
I
–120  
–120  
–5  
IC = –1mA, IB = 0  
V
IE = –10µA, IC = 0  
V
Forward current transfer ratio  
VCE = –5V, IC = –2mA  
180  
520  
Collector to emitter saturation voltage VCE(sat)  
IC = –20mA, IB = –2mA  
VCB = –5V, IE = 2mA, f = 200MHz  
VCE = –40V, IC = –1mA, GV = 80dB,  
Rg = 100k, Function = FLAT  
– 0.6  
V
Transition frequency  
fT  
200  
MHz  
Noise voltage  
NV  
150  
mV  
*hFE Rank classification  
Rank  
hFE  
R
S
180 ~ 360  
260 ~ 520  
1

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