Datasheet > 2SB1037_2014

2SB1037_2014

更新时间： 2022-02-26 12:51:35

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	209K
描述
Silicon NPN Power Transistors

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2SB1037_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SB1037

DESCRIPTION

·With TO-220 package

·High allowable collector dissipation.

·Complement to type 2SD1459

APPLICATIONS

·For color TV vertical output,

sound output applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-150

-5

UNIT

Open base

Open collector

-1.5

-3

I_CM

Collector current-peak

2.0

P_C

Collector power dissipation

T_C=25℃

T_j

Junction temperature

Storage temperature

175

℃

T_stg

-55~175

12 3 4

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