Datasheet > 2SB1037_2014

2SB1037_2014

更新时间： 2022-02-26 12:51:35

品牌	Logo	应用领域
锦美电子 - JMNIC		/
页数	文件大小	规格书
4页	209K
描述
Silicon NPN Power Transistors

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2SB1037_2014 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2SB1037

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

V_(BR)CEO

V_CEsat

V_BEsat

I_CBO

PARAMETER

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector cut-offcurrent

CONDITIONS

MIN

TYP

MAX

UNIT

I_C=-10mA ; I_B=0

-150

I_C=-0.5A, I_B=-50mA

V_CB=-120V;I_E=0

-1.5

-1.2

-10

μA

I_EBO

Emitter cut-offcurrent

V_EB=-5V;I_C=0

-10

h_FE

DC current gain

I_C=-0.3A ; V_CE=-5V

I_C=-0.1A ; V_CE=-5V

200

f_T

Transition frequency

MHz

h_FEclassifications

70-140

100-200

123 4

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