Datasheet > 2SA940

2SA940

更新时间： 2024-02-10 02:10:35

品牌	Logo	应用领域
THINKISEMI		晶体晶体管局域网
页数	文件大小	规格书
3页	530K
描述
PNP Silicon Epitaxial Power Transistor

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中文翻译

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数据手册

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2SA940 数据手册

2SA940

Pb Free Plating Product

PNP Silicon Epitaxial Power Transistor

±0.20

9.90

4.50

±0.

FEATURES

3.6

±0.20

1.30

Complements the 2SC2073.

APPLICATIONS

Power Amplifier Applications.

Vertical Output Applications.

COLLECTOR

±0.20

2.40

±0.20

1.27

±0.20

1.52

BASE

±0.20

0.80

2.54typ

1. BASE

2. COLLECTOR

3. EMITTER

EMITTER

±0.20

0.50

TO-220C

Package Dimension

Dimensions in Millimeters

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

Symbol

Parameter

Unit

V_CBO

Collector-Base Voltage

-150

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CEO

V_EBO

I_C

-1.5

-0.5

Base Current

I_B

Collector Dissipation

T_a=25℃

T_c=25℃

1.5

P_C

Junction and Storage Temperature

T_j,T_stg

-55 to +150

℃

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