Datasheet > 2SA949_07

2SA949_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		开关音频放大器驱动
页数	文件大小	规格书
4页	122K
描述
Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications

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2SA949_07 数据手册

2SA949

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA949

Driver-Stage Audio Amplifier Applications

Unit: mm

High-Voltage Switching Applications

•

High breakdown voltage: V

= −150 V

CEO

Low output capacitance: C = 5.0 pF (max)

High transition frequency: f = 120 MHz (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−150

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

800

150

JEDEC

JEITA

TO-92MOD

stg

−55 to 150

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-09

12 3 4

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