2SA940

更新时间： 2024-01-04 09:20:17

品牌	Logo	应用领域
TRSYS		晶体晶体管局域网
页数	文件大小	规格书
1页	64K
描述
Plastic-Encapsulated Transistors

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中文翻译

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技术参数
数据手册

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2SA940 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

2SA940 数据手册

Transys

Electronics

I M I T E D

TO-220 Plastic-Encapsulated Transistors

2SA940 TRANSISTOR (PNP)

TO-220

1. BASE

FEATURES

Power dissipation

2. COLLECTOR

3. EMITTER

P_CM

: 1.5

W (Tamb=25℃)

Collector current

I_CM

1 2 3

: -1.5

Collector-base voltage

V_(BR)CBO: -150

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-100µA, I_E=0

Ic=-1mA, I_B=0

MIN

-150

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

I_E=-100µA, I_C=0

µA

V_CB=-120V, I_E=0

-10

I_EBO

V_EB=-5V, I_C=0

h_FE(1)

V_CE(sat)

V_BE

DC current gain

_CE=-10V, I_C=-500mA

140

-1.5

-0.85

Collector-emitter saturation voltage

Base-emitter voltage

I_C=-500mA, I_B=-50mA

_CE=-10V, I_C=-500mA

V_CE=-10V, I_C=-500mA

_CB=-10V, I_E=0, f=1MHz

-0.65

MHz

Transition frequency

f_T

C_ob

Collector output capacitance

中文翻译

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