品牌 | Logo | 应用领域 |
三菱 - MITSUBISHI | 放大器晶体管 | |
页数 | 文件大小 | 规格书 |
3页 | 111K | |
描述 | ||
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SC-62, 3 PIN |
生命周期: | Obsolete | 零件包装代码: | SC-62 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 250 | JESD-30 代码: | R-PSSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA1948-T13-1E | MITSUBISHI | Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI |
获取价格 |
|
2SA1948-T13-1G | MITSUBISHI | Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI |
获取价格 |
|
2SA1950 | PANASONIC | Small Signal Bipolar Transistor, 1A I(C), 500V V(BR)CEO, 1-Element, PNP, Silicon |
获取价格 |
|
2SA1952 | ROHM | High-speed Switching Transistor (−60V, −5A) |
获取价格 |
|
2SA1952 | CJ | TO-252-2L |
获取价格 |
|
2SA1952/PQ | ROHM | Small Signal Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, |
获取价格 |