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2SA1952TL/Q

更新时间： 2024-02-16 04:05:21

品牌	Logo	应用领域
罗姆 - ROHM		晶体开关晶体管
页数	文件大小	规格书
3页	67K
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2SA1952TL/Q 数据手册

2SA1952

Transistors

High-speed Switching Transistor (−60V, −5A)

2SA1952

zFeatures

zExternal dimensions (Unit : mm)

1) High speed switching. (tf : Typ. 0.15 µs at I^C= −3A)

2) Low V^CE(sat). (Typ. −0.2V at IC/IB = −3/−0.15A)

3) Wide SOA. (safe operating area)

4) Complements the 2SC5103.

2SA1952

5.5

1.5

0.9

C0.5

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−100

−60

−5

Unit

VCBO

VCEO

VEBO

0.8Min.

1.5

2.5

A(Pulse)

Collector current

9.5

−10

(1) Base(Gate)

(2) Collector(Drain)

(3) Emitter(Source)

W(Tc=25°C)

ROHM : CPT3

EIAJ : SC-63

Collector power dissipation

Junction temperature

Storage temperature

Tstg

150

−55~+150

°C

zPackaging specifications and h^FE

Type

Package

hFE

Code

Basic ordering unit (pieces)

2SA1952

CPT3

2500

zElectrical characteristics (Ta = 25°C)

Parameter

Typ.

Conditions

Symbol

Min.

Max.

Unit

−

130

−

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BV^CEO

BV^EBO

−100

−60

−5

−

120

−

µA

−

−50µA

−1mA

−50µA

CBO

−10

−0.3

−0.5

−1.2

−1.5

270

−

0.3

1.5

0.3

−100V

−5V

−3A/ −0.15A

−4A/ −0.2A

−3A/ −0.15A

−4A /−0.2A

EBO

Emitter cutoff current

CE(sat)

BE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

−2V , I

−10V , I

−1A

−3A

hFE

−

MHz

µs

0.5A , f

= 30MHz

1MHz

Transition frequency

Output capacitance

Turn-on time

Storage time

Fall time

Cob

ton

tstg

0A , f

−3A , R

−IB2 −0.15A

CC −30V

L = 10Ω

−

Rev.A

1/2

12 3

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