5秒后页面跳转
2SA1774-S PDF预览

2SA1774-S

更新时间: 2024-11-23 07:29:47
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
2页 169K
描述
PNP Silicon Epitaxial Transistor

2SA1774-S 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

2SA1774-S 数据手册

 浏览型号2SA1774-S的Datasheet PDF文件第2页 
M C C  
2SA1774-Q  
2SA1774-R  
2SA1774-S  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
PNP Silicon  
RoHS Compliant. See ordering information)  
·
·
·
·
Small Package  
Mounting:any position  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Epitaxial Transistor  
SOT-523  
Maximum Ratings @ Ta = 25?(unless otherwise noted)  
Symbol  
IC  
Parameter  
Value  
-0.15  
Unit  
A
Collector Current  
PD  
Total Device Dissipation  
Junction Temperature  
0.15  
W
R
TJ  
150  
A
D
C
R
TSTG  
Storage Temperature Range  
-55 to +150  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
C
B
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc,IB=0)  
Collector-Base Breakdown Voltage  
(IC=-50uAdc,IE=0)  
Collector-Base Breakdown Voltage  
(IE=-50uAdc,IC=0)  
Collector-Base Cutoff Current  
(VCB=-60Vdc, IE=0)  
V(BR)CEO  
-50  
-60  
-7.0  
V
V
E
B
E
V(BR)CBO  
V
V(BR)EBO  
ICBO  
H
G
J
-0.1  
-0.1  
µAdc  
uAdc  
K
Emitter-Base Cutoff Current  
(VEB=-6.0Vdc, IC=0)  
IEBO  
DIMENSIONS  
ON CHARACTERISTICS  
INCHES  
MM  
DC Current Gain  
HFE  
VCE(sat)  
FT  
120  
560  
-0.5  
DIM  
A
B
C
D
E
G
H
J
K
MIN  
.059  
.030  
.057  
MAX  
.067  
.033  
.069  
MIN  
1.50  
0.75  
1.45  
MAX  
1.70  
0.85  
1.75  
NOTE  
(IC=-1.0mAdc, VCE=-6.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-5.0mAdc, IB=-5.0mAdc)  
Transition Frequency  
(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)  
Collector Output Capacitance  
(VCB=-12Vdc,IC=0Adc,f=1MHZ)  
Vdc  
MHZ  
PF  
.020 Nominal  
0.50Nominal  
0.90  
140(Typ)  
.035  
.043  
.004  
.031  
.008  
.014  
1.10  
.000  
.028  
.004  
.010  
.000  
.70  
.100  
.25  
.100  
0.80  
.200  
.35  
Cob  
5
CLASSIFICATION OF hFE  
Rank  
Q
R
180-390  
FR  
S
Range  
120-270  
FQ  
270-560  
FS  
Marking  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 2  

与2SA1774-S相关器件

型号 品牌 获取价格 描述 数据表
2SA1774S-G WEITRON

获取价格

Transistor
2SA1774SGP CHENMKO

获取价格

Transistor,
2SA1774-S-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
2SA1774T1 ONSEMI

获取价格

PNP Silicon General Purpose Amplifier Transistor
2SA1774T106 ROHM

获取价格

General Purpose Transistor
2SA1774T106Q ROHM

获取价格

General Purpose Transistor
2SA1774T106R ROHM

获取价格

General Purpose Transistor
2SA1774T106S ROHM

获取价格

General Purpose Transistor
2SA1774T1G ONSEMI

获取价格

PNP Silicon General Purpose Amplifier Transistor
2SA1774TL/QR ROHM

获取价格

150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR