Datasheet > 2SA1721_07

2SA1721_07

更新时间： 2024-09-27 12:20:03

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器显示器高压
页数	文件大小	规格书
5页	192K
描述
High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications

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中文翻译

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数据手册

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2SA1721_07 数据手册

2SA1721

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1721

High Voltage Control Applications

Unit: mm

Plasma Display, Nixie Tube Driver Applications

Cathode Ray Tube Brightness Control Applications

•

High voltage: V

= −300 V, V

= −300 V

CBO

CEO

Low saturation voltage: V

= −0.5 V (max)

CE (sat)

Small collector output capacitance: C = 5.5 pF (typ.)

Complementary to 2SC4497

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−300

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−100

−20

°C

JEDEC

JEITA

TO-236MOD

Base current

SC-59

Collector power dissipation

Junction temperature

Storage temperature range

150

TOSHIBA

2-3F1A

150

stg

−55~150

Weight: 0.012 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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