Datasheet > 2SA1725_07

2SA1725_07

更新时间： 2024-01-18 13:44:26

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	28K
描述
Silicon PNP Epitaxial Planar Transistor

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数据手册

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2SA1725_07 数据手册

2 S A1 7 2 5

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511)

Application : Audio and General Purpose

External Dimensions FM20(TO220F)

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

Symbol

V^CBO

VCEO

VEBO

Symbol

I^CBO

Ratings

–10max

–80min

50min

Ratings

Conditions

Unit

µA

Unit

±0.2

4.2

±0.2

10.1

0.5

V^CB=–80V

2.8

–80

IEBO

V^EB=–6V

–80

V(BR)CEO

hFE

I^C=–25mA

–6

±0.2

ø3.3

V^CE=–4V, IC=–2A

I^C=–2A, IB=–0.2A

V^CE=–12V, IE=0.5A

V^CB=–10V, f=1MHz

–6

–3

VCE(sat)

–0.5max

20typ

MHz

30(Tc=25°C)

150

°C

COB

150typ

±0.15

1.35

±0.15

Tstg

1.35

–55 to +150

hFE Rank O(50 100), P(70 140), Y(90 180)

+0.2

-0.1

0.85

+0.2

-0.1

0.45

±0.2

2.4

2.54

■Typical Switching Characteristics (Common Emitter)

±0.2

2.2

R^L

I^C

VBB1

V^BB2

(V)

I^B1

I^B2

ton

tstg

VCC

(V)

Weight : Approx 2.0g

a. Part No.

b. Lot No.

(Ω)

(A)

(V)

(A)

(µs)

C E

–3

–10

–0.3

0.3

0.18typ

1.10typ 0.21typ

–30

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=–4V)

–6

–3

–5

–4

–3

–2

–1

–4

–2

–50mA

–30mA

–20mA

–1

I^B=–10mA

IC=–6A

–4A

–2A

–1

–2

–3

–4

–0.5

–1.0

–1.5

–0.5

–1

–1.5

Collector-Emitter Voltage VCE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=–4V)

300

100

300

125˚C

25˚C

Typ

–30˚C

100

0.5

0.4

100

Time t(ms)

1000 2000

–0.02

–0.1

–0.5

–1

–5 –6

–0.02

–0.1

–0.5

–1

–5 –6

Collector Current I^C(A)

Collector Current IC(A)

–

f^TI^ECharacteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=–12V)

–20

–10

–5

Typ

100ms

–1

–0.5

Without Heatsink

Natural Cooling

–0.1

Without Heatsink

0.02

–0.05

0.05 0.1

0.5

5 6

–3

–5

–10

–50

–100

100

125

150

Collector-Emitter Voltage V^CE(V)

Emitter Current I^E(A)

Ambient Temperature Ta(˚C)

中文翻译

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与2SA1725_07相关器件

型号	品牌	获取价格	描述	数据表
2SA1725O	ISC	获取价格	Transistor
2SA1725P	ISC	获取价格	Transistor
2SA1725Y	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SA1725Y	ISC	获取价格	Transistor
2SA1726	SAVANTIC	获取价格	Silicon PNP Power Transistors
2SA1726	JMNIC	获取价格	Silicon PNP Power Transistors
2SA1726	ISC	获取价格	Silicon PNP Power Transistor
2SA1726	SANKEN	获取价格	Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)
2SA1726	NJSEMI	获取价格	Trans GP BJT PNP 80V 14A 3-Pin(3+Tab) TO-220
2SA1726O	SANKEN	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti

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