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2SA1721O PDF预览

2SA1721O

更新时间: 2024-01-13 18:43:47
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 113K
描述
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 100MA I(C) | SC-59

2SA1721O 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.46
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):55 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2SA1721O 数据手册

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