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2SA1647-M PDF预览

2SA1647-M

更新时间: 2024-11-24 13:02:03
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管
页数 文件大小 规格书
6页 162K
描述
5000mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA, MP-3, 3 PIN

2SA1647-M 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:TO-251AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.43外壳连接:COLLECTOR
最大集电极电流 (IC):5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):90 MHz最大关闭时间(toff):1900 ns
最大开启时间(吨):300 nsBase Number Matches:1

2SA1647-M 数据手册

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PACKAGE DRAWING (UNIT: mm)  
The 2SA1647 is a mold power transistor developed for high-  
speed switching and features a very low collector-to-emitter  
saturation voltage.  
This transistor is ideal for use in switching regulators, DC/DC  
converters, motor drivers, solenoid drivers, and other low-voltage  
power supply devices, as well as for high-current switching.  
FEATURES  
• Available for high-current control in small dimension  
• Z type is a lead processed product and is deal for mounting a  
hybrid IC.  
• Low collector saturation voltage:  
VCE(sat) = 0.3 V MAX. (@IC = 3 A)  
• Fast switching speed:  
tf = 0.4 µs MAX. (@IC = 3 A)  
• High DC current gain and excellent linearity  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
Ratings  
150  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Base to emitter voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
VCBO  
VCEO  
100  
V
7.0  
VEBO  
V
5.0  
IC(DC)  
A
10  
IC(pulse)*  
IB(DC)  
A
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2.5  
A
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PT (Tc = 25 °C)  
PT (TA = 25 °C)  
Tj  
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
18  
W
W
°C  
°C  
1.0**, 2.0***  
150  
55 to +150  
Tstg  
*: PW 10 ms, duty cycle 50%  
**: Printing board mounted  
***: 7.5 mm × 0.7 mm ceramic board mounted  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
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2002  
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与2SA1647-M相关器件

型号 品牌 获取价格 描述 数据表
2SA1647M(0)-AZ RENESAS

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TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-251
2SA1647M-AZ RENESAS

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TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-251
2SA1647-M-Z NEC

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Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252AA
2SA1647M-Z-AZ RENESAS

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暂无描述
2SA1647-Z RENESAS

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SILICON POWER TRANSISTOR
2SA1647-Z NEC

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SILICON POWER TRANSISTOR
2SA1647-Z-E2 RENESAS

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2SA1647-Z-E2
2SA1647-Z-E2-AZ RENESAS

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TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252
2SA1647-ZK NEC

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TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-252
2SA1647-ZK-AZ RENESAS

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TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252