是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | TO-251AA | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.43 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-251AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 90 MHz | 最大关闭时间(toff): | 1900 ns |
最大开启时间(吨): | 300 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1647M(0)-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-251 | |
2SA1647M-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-251 | |
2SA1647-M-Z | NEC |
获取价格 |
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252AA | |
2SA1647M-Z-AZ | RENESAS |
获取价格 |
暂无描述 | |
2SA1647-Z | RENESAS |
获取价格 |
SILICON POWER TRANSISTOR | |
2SA1647-Z | NEC |
获取价格 |
SILICON POWER TRANSISTOR | |
2SA1647-Z-E2 | RENESAS |
获取价格 |
2SA1647-Z-E2 | |
2SA1647-Z-E2-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252 | |
2SA1647-ZK | NEC |
获取价格 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-252 | |
2SA1647-ZK-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,PNP,100V V(BR)CEO,5A I(C),TO-252 |