2SA1648

更新时间： 2024-11-19 21:55:03

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管
页数	文件大小	规格书
5页	156K
描述
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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中文翻译

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技术参数
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2SA1648 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	IN-LINE, R-PSIP-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.18	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	60 V	配置：	SINGLE
最小直流电流增益 (hFE)：	60	JESD-30 代码：	R-PSIP-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	TIN LEAD	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	90 MHz	Base Number Matches：	1

2SA1648 数据手册

DATA SHEET

SILICON POWER TRANSISTOR

2SA1648,1648-Z

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SA1648 is a mold power transistor developed for high-

PACKAGE DRAWINGS (Unit: mm)

speed switching and features a very low collector-to-emitter

saturation voltage.

2.3 0.2

0.5 0.1

6.5 0.2

5.0 0.2

This transistor is ideal for use in switching regulators, DC/DC

converters, motor drivers, solenoid drivers, and other low-voltage

power supply devices, as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead processed product and is deal for mounting a

hybrid IC.

1.1 0.2

• Mold package that does not require an insulating board or

insulation bushing

0.5 ⁺−0⁰.^.1²

0.5 ⁺−⁰0^..²1

2.3 2.3

• Low collector saturation voltage:

V^CE(sat)1= −0.3 V MAX. (IC = −3.0 A)

• Fast switching speed:

t^f= 0.3 µs MAX. (IC = −3.0 A)

• High DC current gain and excellent linearity

TO-251 (MP-3)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

6.5 0.2

5.0 0.2

2.3 0.2

0.5 0.1

Parameter

Symbol

VCBO

Ratings

−100

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

VCEO

−60

VEBO

−7.0

0.9

0.8

MAX. MAX.

1.1 0.2

IC(DC)

−5.0

2.3 2.3

0.8

Note 1

Collector current (pulse)

Base current (DC)

IC(pulse)

IB(DC)

−10

−2.5

TO-252 (MP3Z)

Total power dissipation (Tc = 25°C)

Total power dissipation (Ta = 25°C)

Junction temperature

°C

ELECTRODE CONNECTION

1.0^{Note 2}, 2.0^{Note 3}

1. Base

2. Collector

3. Emitter

150

Storage temperature

Tstg

−55 to +150

4. Collector (Fin)

Notes 1. PW ≤ 300 µs, Duty Cycle ≤ 10%

2. Printing board mounted

3. 7.5 mm²× 0.7 mm ceramic board mounted

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16121EJ3V0DS00 (3rd edition)

Date Published August 2004 NS CP(K)

Printed in Japan

The mark shows major revised points.

2002

12 3 4 5

中文翻译

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与2SA1648相关器件

型号	品牌	获取价格	描述	数据表
2SA1648-AZ	RENESAS	获取价格	Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
2SA1648K	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-251AA
2SA1648-K	NEC	获取价格	暂无描述
2SA1648K-AZ	RENESAS	获取价格	TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,5A I(C),TO-251
2SA1648K-Z-AZ	RENESAS	获取价格	2SA1648K-Z-AZ
2SA1648K-Z-E2	RENESAS	获取价格	2SA1648K-Z-E2
2SA1648K-Z-E2-AZ	RENESAS	获取价格	2SA1648K-Z-E2-AZ
2SA1648K-Z-T1	RENESAS	获取价格	2SA1648K-Z-T1
2SA1648K-Z-T2	RENESAS	获取价格	2SA1648K-Z-T2
2SA1648L	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 5A I(C) \| TO-251AA

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