Datasheet > 2SA1432-R(TPF2)

2SA1432-R(TPF2)

更新时间： 2024-11-14 07:46:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	152K
描述
TRANSISTOR,BJT,PNP,300V V(BR)CEO,100MA I(C),SC-71

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2SA1432-R(TPF2) 数据手册

2SA1432

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1432

High Voltage Control Applications

Unit: mm

Plasma Display, Nixie Tube Driver Applications

Cathode Ray Tube Brightness Control Applications

•

High voltage: V

= −300 V, V

= −300 V

CBO

CEO

Low saturation voltage: V

= −0.5 V (max)

CE (sat)

Small collector output capacitance: C = 6 pF (typ.)

Complementary to 2SC3672

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−300

−8

Collector-emitter voltage

Emitter-base voltage

Collector current

JEDEC

JEITA

―

−100

−20

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

1000

150

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

stg

−55 to 150

Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4 5 6

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