Datasheet > 2SA1434-3

2SA1434-3

更新时间： 2024-11-14 01:18:59

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3页	937K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1434-3 数据手册

SMD Type

TransistIoCrs

PNP Transistors

2SA1434

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

Adoption of FBET process.

High DC current gain (hFE=500 to 1200).

Low collector-to-emitter saturation voltage

(V^CE(sat) 0.5V).

+0.02

-0.02

+0.1

0.15

0.95

-0.1

+0.1

-0.2

1.9

High VEBO (VEBO 15V).

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-60

Unit

-50

-15

-100

Collector current (pulse)

Collector dissipation

I^cp

-200

P^C

200

Junction temperature

Storage temperature

T^j

125

Tstg

-55 to +125

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-60

-50

-15

Ic= -100 μA， I

Ic= -1mA，RBE=∞

= -100μA， I =0

E=0

CBO

EBO

CB= -40V , I

EB= -10V , I

=-50 mA, I

=-10 uA, I

CE= -5V, I

-100

-0.5

-1.1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=- 1mA

-0.2

-0.8

B=- 1mA

= -10mA

500

800 1200

4.8

Common base output capacitance

Transition frequency

CB= -10V, f=1MHz

CB= -10V,I =-10mA

100

MHz

Marking

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