Datasheet > 2SA1255-Y(TE85L,F)

2SA1255-Y(TE85L,F)

更新时间： 2024-11-25 14:32:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	235K
描述
TRANSISTOR,BJT,PNP,200V V(BR)CEO,50A I(C),TO-236AB

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技术参数
数据手册

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2SA1255-Y(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	最大集电极电流 (IC)：	50 A
配置：	Single	最小直流电流增益 (hFE)：	120
最高工作温度：	125 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.15 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

2SA1255-Y(TE85L,F) 数据手册

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2SA1255

TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process)

2SA1255

High Voltage Switching Applications

Unit: mm

•

High voltage: V

= −200 V (min)

CBO

CEO

•

Small package

Complementary to 2SC3138

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−200

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−50

°C

Base current

−20

Collector power dissipation

Junction temperature

Storage temperature range

150

125

JEDEC

JEITA

TO-236MOD

stg

−55~125

SC-59

TOSHIBA

2-3F1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

Weight: 0.012 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

2007-11-01

12 3 4 5

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