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2SA1256-E4 PDF预览

2SA1256-E4

更新时间: 2024-02-03 19:36:45
品牌 Logo 应用领域
科信 - KEXIN 放大器光电二极管晶体管
页数 文件大小 规格书
4页 1433K
描述
PNP Transistors

2SA1256-E4 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.47最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):90JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):230 MHz
Base Number Matches:1

2SA1256-E4 数据手册

 浏览型号2SA1256-E4的Datasheet PDF文件第2页浏览型号2SA1256-E4的Datasheet PDF文件第3页浏览型号2SA1256-E4的Datasheet PDF文件第4页 
SMD Type  
Transistors  
PNP Transistors  
2SA1256  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
High fT (230MHz typ), and small Cre (1.1pF typ).  
Small NF (2.5dB typ).  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-30  
Unit  
V
-20  
V
-5  
V
-30  
mA  
mW  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
150  
125  
Tj  
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= -100 μAI =0  
Ic= -1 mAI =0  
= -100μAI  
Min  
-30  
-20  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
=0  
I
CBO  
EBO  
V
V
CB= -10 V , I  
E
=0  
-100  
-100  
0.5  
nA  
V
I
EB= -4V , IC=0  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-20 mA, I  
B
=-1mA  
=-1mA  
V
C=-20 mA, I  
B
1.2  
h
FE  
V
V
CE= -6V, I  
CE= -6V, I  
CE= -6V, I  
C
= -1mA  
60  
270  
Noise figure  
NF  
PG  
2.5  
22  
C
= -1mA,f=100MHz  
= -1mA,f=31.9MHz  
dB  
Voltage gain  
Base-collector time constant  
Collector output capacitance  
Transition frequency  
rbb,Cc  
V
V
V
C
11  
20  
ps  
pF  
C
re  
CB= -6V, f=10MHz  
CE= -6V, I = -1mA  
1.1  
230  
1.7  
fT  
C
150  
MHz  
Classification of hfe  
Type  
Range  
Marking  
2SA1256-E3  
60-120  
E3  
2SA1256-E4  
90-180  
E4  
2SA1256-E5  
135-270  
E5  
1
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