Datasheet > 2SA1257-G5

2SA1257-G5

更新时间： 2024-11-26 01:08:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	989K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1257-G5 数据手册

SMD Type

Transistors

PNP Transistors

2SA1257

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High breakdown voltage.

Small output capacitance.

● Very small-sized package permitting the 2SA1257/

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

2SC3143-applied sets to be made small and slim.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-180

-160

-5

Unit

-80

Collector current (pulse)

Collector dissipation

I^CP

-150

200

125

P^C

Jumction temperature

Storage temperature

T^j

Tstg

-55 to +125

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Symbol

Test Conditions

Min

-180

-160

-5

Typ

Max

Unit

CBO

Ic= -100 μA， I

Ic= -1 mA， RBE=∞

= -100μA， I =0

CB= -120 V , I =0

E=0

CEO

EBO

CBO

EBO

-100

-0.7

-1.2

-1.5

270

EB= -4V , I

=-30mA, I

C=0

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=- 3mA

=-30mA, I

stg

CE= -5V , I

C=-10mA

DC current gain

CE= -5V, I

C= -10mA

Turn-on time

0.15

0.95

0.15

2.4

See Test Circuit.

Storage time

Fall time

Collector output capacitance

Transition frequency

CB= -10V, f-1MHz

CE= -10V, I = -10mA

3.2

130

MHz

■ Classification of hfe

Type

Range

Marking

2SA1257-G3

60-120

2SA1257-G4

90-180

2SA1257-G5

135-270

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