2SA1235AE

更新时间： 2024-11-25 12:59:47

品牌	Logo	应用领域
RECTRON		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
2页	291K
描述
Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SA1235AE 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

2SA1235AE 数据手册

RECTRON

TECHNICAL SPECIFICATION

2SA1235A

SEMICONDUCTOR

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

FEATURES

* Power dissipation

PCM :

0.2

W(Tamb=25^OC)

* Collector current

ICM :

-0.2

* Collector-base voltage

-60

(BR)CBO

SOT-23

* Operating and storage junction temperature range

T ,Tstg: -55^OC to +150^OC

COLLECTOR

MECHANICAL DATA

BASE

0.055(1.40)

0.047(1.20)

Case: Molded plastic

EMITTER

Epoxy: UL 94V-O rate flame retardant

Lead: MIL-STD-202E method 208C guaranteed

Mounting position: Any

0.006(0.15)

0.003(0.08)

0.043(1.10)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.019(2.00)

0.071(1.80)

0.118(3.00)

0.110(2.80)

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

SYMBOL

MIN

-60

MAX

UNITS

Collector-Base Breakdown Voltage (IC= -100 µA, IE=0)

V(BR)CBO

V(BR)CEO

Collector-Emitter Breakdown Voltage (IC= -100 µA, IB=0)

Emitter-Base Breakdown Voltage (IE= -100 µA, IC=0)

Collector Cut-Off Current (VCB= -60V, IE=0)

-50

-6

V(BR)EBO

µA

ICBO

IEBO

-0.1

Emitter Cut-Off Current (VEB= -6V, IC=0)

µA

DC Current Gain(VCB= -6V, IC= -1mA)

DC Current Gain(VCE= -6V, IC= -0.1mA)

500

150

hFE

-0.3

-1

VCE(sat)

VBE(sat)

Collector-Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)

Base-Emitter Saturation Voltage(IC=-100 mA, IB= -10mA)

MHZ

Tiansition Frequency(VCE= -6V, IC= -10mA)

180

Cob

Collector Output Capacitance(VCE= -6V, IE=0, f=1MHZ)

Noise Figure(VCE= -6V, IE= 0.3mA, f=100HZ, R =10KΩ)

CLASSIFICATION OF hFE(1)

RANK

Range

Marking

150~300

250~500

2006-3

中文翻译

下载PDF

与2SA1235AE相关器件

型号	品牌	获取价格	描述	数据表
2SA1235AE-T	RECTRON	获取价格	Transistor
2SA1235AF	RECTRON	获取价格	Transistor
2SA1235AF-T	RECTRON	获取价格	暂无描述
2SA1235AM-E	TRSYS	获取价格	Transistor
2SA1235E	RECTRON	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, PLAST
2SA1235-E	KEXIN	获取价格	PNP Transistors
2SA1235F	RECTRON	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 1-Element, PNP, Silicon, ROHS COMPLIANT, PLAST
2SA1235-F	KEXIN	获取价格	PNP Transistors
2SA1235-G	KEXIN	获取价格	PNP Transistors
2SA1237	SANYO	获取价格	DIFFERENTIAL AMP APPLICATIONS