Datasheet > 2SA1241

2SA1241

更新时间： 2023-12-06 20:11:42

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
2页	237K
描述
功率三极管

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中文翻译

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数据手册

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2SA1241 数据手册

2SA1241

PNP Silicon Epitaxial Planar Transistor

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Base Current

I_B

500

Power Dissipation

P_tot

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 2 V, -I_C= 500 mA

Current Gain Group O

h_FE

100

160

200

320

at -V_CE= 2 V, -I_C= 4 A

Collector Base Cutoff Current

at -V_CB= 35 V

Emitter Base Cutoff Current

at -V_EB= 8 V

-I_CBO

-I_EBO

100

Collector Emitter Breakdown Voltage

at -I_C= 10 mA

Emitter Base Breakdown Voltage

at -I_E= 1 mA

Collector Emitter Saturation Voltage

at -I_C= 3 A, -I_B= 75 mA

Base Emitter Voltage

at -I_C= 4 A, -V_CE= 2 V

Transition Frequency

at -V_CE= 2 V, -I_C= 0.5 A

Collector Output Capacitance

at -V_CB= 10 V, f = 1 MHz

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE

0.5

1.5

f_T

170

MHz

C_ob

Dated: 16/01/2016 CL Rev: 02

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