SMD Type
TransistIoCrs
PNP Transistors
2SA1235
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Small collector to emitter saturation voltage.
Excelent lineary DC forward current gain.
Super mini package for easy mounting.
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-50
Unit
V
V
-50
-6
V
Collector current
-200
mA
mW
PC
200
Collector dissipation (Ta=25
Jumction temperature
Storage temperature
)
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
-50
-50
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, IE=0
I
I
C
= -1 mA, I
= -100μA,I
CB= -50 V , I
EB= -6V , I =0
B
=0
=0
E
C
I
CBO
EBO
V
V
E
=0
-0.1
-0.1
-0.3
-1.2
800
uA
V
I
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=-100 mA, I
B
B
=-10mA
=-10mA
V
C
=-100 mA, I
V
V
V
V
V
CE= -6V, I
CE= -6V, I
CB= -6V, I
CB= -6V, I
CE= -6V, I
C
= -1mA
150
90
DC forward current gain
hFE
C
= -0.1mA
Noise figure
NF
E
E
E
= 0.3mA,f=100 Hz,R
= 0,f=1MHz
G
=10kΩ
20
dB
pF
Collector output capacitance
Transition frequency
C
ob
T
4
f
= -10mA
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SA1235-E
150-300
ME
2SA1235-F
2SA1235-G
400-800
MG
250-500
MF
1
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